AS4C256M16D3LC-10BIN

Alliance Memory
913-4C256M16D3L10BIN
AS4C256M16D3LC-10BIN

製造商:

說明:
DRAM DDR3, 4G, 256M X 16, 1.35V, 96-BALL FBGA, 933MHZ, Industrial Temp - Tray

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 284

庫存:
284 可立即送貨
工廠前置作業時間:
16 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:

Pricing (TWD)

數量 單價
總價
NT$885.24 NT$885.24
NT$819.36 NT$8,193.60
NT$793.08 NT$19,827.00
NT$773.64 NT$38,682.00
NT$740.52 NT$74,052.00
NT$731.52 NT$152,887.68
NT$725.40 NT$303,217.20
1,045 報價

商品屬性 屬性值 選擇屬性
Alliance Memory
產品類型: DRAM
RoHS:  
SDRAM - DDR3L
4 Gbit
16 bit
933 MHz
FBGA-96
256 M x 16
20 ns
1.283 V
1.45 V
- 40 C
+ 95 C
Tray
品牌: Alliance Memory
組裝國家: Not Available
擴散國: Not Available
原產國: TW, CN
濕度敏感: Yes
安裝風格: SMD/SMT
產品類型: DRAM
原廠包裝數量: 209
子類別: Memory & Data Storage
電源電流 - 最大值: 84 mA
找到產品:
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所選屬性: 0

CNHTS:
8542329010
CAHTS:
8542320020
USHTS:
8542320036
MXHTS:
8542320299
ECCN:
EAR99

DDR3 Synchronous DRAM

Alliance Memory DDR3 Synchronous DRAM (SDRAM) achieves high-speed double-data-rate transfer rates of up to 1600Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3 DRAM key features, and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with differential DQS pairs in a source synchronous fashion. These Alliance Memory devices operate with a single 1.5V ± 0.075V power supply and are available in BGA packages.