DI006H03SQ

Diotec Semiconductor
637-DI006H03SQ
DI006H03SQ

製造商：

說明：
MOSFET MOSFET, SO-8, 30V, 6A, 150C, N+P

規格書:
ECAD模型:
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庫存量: 3,949

庫存：
3,949 可立即送貨
工廠前置作業時間：
10 週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:

Pricing (TWD)

數量 單價
總價
NT$84.96 NT$84.96
NT$54.72 NT$547.20
NT$37.44 NT$3,744.00
NT$29.84 NT$14,920.00
NT$29.16 NT$29,160.00
完整捲（訂購多個4000）
NT$23.44 NT$93,760.00

商品屬性 屬性值 選擇屬性
Diotec Semiconductor
產品類型: MOSFET
RoHS:  
Si
SMD/SMT
SO-8
N-Channel, P-Channel
4 Channel
30 V
4.2 A, 6 A
25 mOhms, 50 mOhms
- 20 V, 20 V
1 V, 2 V
11.7 nC, 11.4 nC
- 55 C
+ 150 C
1.5 W
Enhancement
Reel
Cut Tape
品牌: Diotec Semiconductor
配置: Quad
組裝國家: Not Available
擴散國: Not Available
原產國: CN
下降時間: 8.7 ns, 13.5 ns
互導 - 最小值: 4 S, 3.5 S
濕度敏感: Yes
產品類型: MOSFETs
上升時間: 15 ns, 4.9 ns
系列: DI0XX
原廠包裝數量: 4000
子類別: Transistors
標準斷開延遲時間: 17.5 ns, 28.2 ns
標準開啟延遲時間: 11.2 ns, 7.5 ns
找到產品:
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所選屬性: 0

規格書

Models

CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

DI006H03SQ N/P-Channel Power MOSFET H-Bridge

Diotec Semiconductor DI006H03SQ N/P-Channel Power MOSFET H-Bridge delivers a low on-state resistance, a low gate charge, and fast switching times. With a wide junction temperature range from -55°C to +150°C, DI006H03SQ provides 1.5W maximum power dissipation and a ±20V maximum continuous gate-source voltage. The low-profile SO-8 packaged DI006H03SQ is geared toward DC/DC converters, power supplies, DC drives, synchronous rectifiers, and commercial/industrial-grade applications.

Advanced Trench Technology Power MOSFETs

Diotec Semiconductors Advanced Trench Technology Power MOSFETs feature low on-state resistance and fast switching time. These MOSFETs components are available in standard commercial/industrial grading. The power MOSFETs are offered as N, P, or dual N+P channel types in single, dual, and H bridge configurations. These MOSFETs offer a 100mA to 280A current range and a 20V to 250V voltage range.

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