IXFA38N30X3

IXYS
747-IXFA38N30X3
IXFA38N30X3

製造商：

說明：
MOSFET TO263 300V 38A N-CH X3CLASS

規格書:
ECAD模型:
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庫存量: 417

庫存：
417
可立即送貨
在途量:
590
工廠前置作業時間：
27
週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:

Pricing (TWD)

數量 單價
總價
NT$258.12 NT$258.12
NT$162.72 NT$1,627.20
NT$133.20 NT$13,320.00
NT$118.44 NT$59,220.00

商品屬性 屬性值 選擇屬性
IXYS
產品類型: MOSFET
RoHS:  
REACH - SVHC:
Si
SMD/SMT
TO-263-3
N-Channel
1 Channel
300 V
38 A
50 mOhms
- 20 V, 20 V
2.5 V
35 nC
- 55 C
+ 150 C
240 W
Enhancement
HiPerFET
Tube
品牌: IXYS
配置: Single
組裝國家: KR
擴散國: Not Available
原產國: KR
下降時間: 14 ns
互導 - 最小值: 20 S
產品類型: MOSFETs
上升時間: 23 ns
系列: HiPerFET
原廠包裝數量: 50
子類別: Transistors
晶體管類型: 1 N-Channel
標準斷開延遲時間: 60 ns
標準開啟延遲時間: 19 ns
每件重量: 4 g
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所選屬性: 0

規格書

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CNHTS:
8541290000
TARIC:
8541290000
USHTS:
8541290065
ECCN:
EAR99

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X-Class 850V - 1000V Power MOSFETs with HiPerFET™

IXYS X-Class 850V-1000V Power MOSFETs with HiPerFET™ with fast body diodes are rugged devices that display the lowest on-state resistances in the industry. This enables a very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these ultra-junction MOSFETs help reduce switching losses and Electromagnetic Interference (EMI).

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X3-Class HiPerFET™功率MOSFET

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HiPerFET™ Power MOSFETs

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