BFR840L3RHESDE6327XTSA1

Infineon Technologies
726-BFR840L3RHESDE63
BFR840L3RHESDE6327XTSA1

製造商:

說明:
RF雙極結體管 RF BIP TRANSISTORS

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 13,920

庫存:
13,920
可立即送貨
在途量:
14,990
工廠前置作業時間:
6
工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:
包裝:
完整捲(訂購多個15000)

Pricing (TWD)

數量 單價
總價
零卷 / MouseReel™
NT$29.16 NT$29.16
NT$18.65 NT$186.50
NT$15.26 NT$1,526.00
NT$14.62 NT$7,310.00
NT$14.08 NT$14,080.00
NT$13.54 NT$33,850.00
完整捲(訂購多個15000)
NT$13.54 NT$203,100.00
† NT$215.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。

商品屬性 屬性值 選擇屬性
Infineon
產品類型: RF雙極結體管
RoHS:  
BFR840L3
Bipolar
SiGe
75 GHz
2.25 V
2.9 V
35 mA
- 55 C
+ 150 C
Single
SMD/SMT
TSLP-3
Reel
Cut Tape
MouseReel
品牌: Infineon Technologies
組裝國家: Not Available
擴散國: Not Available
原產國: DE
Pd - 功率消耗 : 75 mW
產品類型: RF Bipolar Transistors
原廠包裝數量: 15000
子類別: Transistors
零件號別名: BFR 840L3RHESD E6327 SP000978848
每件重量: 0.500 mg
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所選屬性: 0

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CNHTS:
8541210000
CAHTS:
8541290000
USHTS:
8541210075
JPHTS:
8541290100
KRHTS:
8541219000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

RF Transistors

Infineon RF Transistors include Low Noise Amplifiers and High Linearity Transistors. Devices in the Low Noise category are based on silicon bipolar technology. Moderate transition frequency of fT <20 GHz provides ease of use and stability. Breakdown voltage can safely support supply voltage of 5V. These transistors are suitable for use with AM over VHF/UHF up to 14GHz. High Linearity Transistors provide OIP3 (Output 3rd Order Intercept Point) above 29dBm. They are based on Infineon's high volume silicon bipolar and SiGe:C technologies for best in class noise figures. These devices are ideal for drivers, pre-amplifiers, and buffer amplifiers.

BFPx4 RF Transistors

Infineon BFPx4 RF Transistors provide the designer the best possible performance, superior flexibility and price/performance ratio. These are widely used for new emerging wireless applications, where the system specification is not yet firmly established. The BFxx Low Noise Amplifiers (LNAs) include devices suitable for use from AM over VHF/UHF up to 14GHz. These are the latest LNA innovations based on Infineon's reliable high volume 80GHz fT silicon germanium carbon (SiGe:C) heterojunction bipolar technology. They combine uncompromised RF performance with outstanding robustness against high RF input power overdrive and ESD.

RF Solutions for IoT applications

Infineon Technologies RF Solutions portfolio delivers high-performance RF technology products for reliable wireless connectivity in IoT applications. The number of IoT devices is growing at an astonishing rate. At the same time, customers expect a superior user experience in terms of product design and functionality.