似乎你已停用瀏覽器的JavaScript。除非你登入，否則此頁面上的某些功能將無法使用。

S25FL128SAGMFIR00

Name: Infineon S25FL128SAGMFIR00
Brand: Infineon Technologies
SKU: 797-25FL128SAGMFIR00
Price: 140.4 TWD
Availability: InStock

影像僅供參考
請參閱產品規格

Mouser 編號：

797-25FL128SAGMFIR00

製造商編號：

S25FL128SAGMFIR00

製造商：

Infineon Technologies

說明：

NOR快閃 128Mb 3V 133MHz Serial NOR快閃

規格書:

S25FL128SAGMFIR00 規格書 (PDF)

ECAD模型:

下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

更多資訊

瞭解更多關於Infineon Technologies S25FL128SAGMFIR00的資訊

庫存量: 1,189

庫存：: 1,189

可立即送貨

發生意外錯誤了。請稍後再試。
在途量:: 1,200
工廠前置作業時間：: 3

週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

NT$-.--

總價:

NT$-.--

估計關稅:

Pricing (TWD)

數量	單價	總價
	NT$140.40	NT$140.40
	NT$131.40	NT$1,314.00
	NT$128.16	NT$3,204.00
	NT$125.64	NT$6,282.00
	NT$109.08	NT$10,908.00
	NT$106.56	NT$26,640.00
	NT$105.84	NT$52,920.00
	NT$105.48	NT$126,576.00
	NT$101.88	NT$244,512.00

備用包裝

製造商元件編號:

S25FL128SAGMFIR01

包裝:

Tube

供貨情況:

庫存量

價格:

NT$143.64

最小值:

製造商元件編號:

S25FL128SAGMFIR03

包裝:

Reel, Cut Tape

供貨情況:

庫存量

價格:

NT$143.64

最小值:

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

商品屬性	屬性值	選擇屬性
製造商:	Infineon
產品類型:	NOR快閃
RoHS:
安裝風格:	SMD/SMT
封裝/外殼:	SOIC-16
系列:	S25FL128S
存儲容量:	128 Mbit
電源電壓 - 最小值:	2.7 V
電源電壓 - 最大值:	3.6 V
有源讀取電流 - 最大:	100 mA
接口類型:	SPI
最高時鐘頻率:	133 MHz
組織:	16 M x 8
數據匯流排寬度:	8 bit
計時類型:	Synchronous
最低工作溫度:	- 40 C
最高工作溫度:	+ 85 C
封裝:	Tray
品牌:	Infineon Technologies
組裝國家:	Not Available
擴散國:	Not Available
原產國:	US
濕度敏感:	Yes
產品類型:	NOR Flash
速度:	133 MHz
原廠包裝數量:	1200
子類別:	Memory & Data Storage
公司名稱:	MirrorBit
每件重量:	200.700 mg

找到產品:

若要顯示類似商品，請選取至少一個核選方塊

至少選中以上一個核取方塊以顯示在此類別中類似的產品。

所選屬性: 0

篩選文檔:

規格書

S25FL128SAGMFIR00 規格書 (PDF)

EOL

Product Discontinuation Notification 2025-2-11 (PDF)

Statement Regarding the RoHS Compliance of Cypress Products

CNHTS:: 8542329090
CAHTS:: 8542320040
USHTS:: 8542320051
JPHTS:: 8542320312
KRHTS:: 8542321040
TARIC:: 8542326100
MXHTS:: 8542320299
ECCN:: 3A991.b.1.a

FL Serial NOR Flash

Infineon Technologies FL Serial NOR Flash memory offers a reduced pin count for lower system cost while providing optimal read/write performance for various automotive, networking, consumer electronics, and industrial applications.

S25FL128S NOR Flash Memory Devices

Infineon Technologies S25FL128S FL-S NOR Flash Memory Devices are a 2.7V to 3.6V / 1.65V to 3.6V VIO Volt non-volatile memory using 65nm MIRRORBIT™ technology. Designed using the Eclipse architecture with a Page Programming Buffer, the 128-Mb S25FL128S FL-S NOR allows users to program up to 128 words (256 bytes) in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via a Serial Peripheral Interface (SPI) and supports traditional SPI single-bit serial input and output (Single I/O or SIO), optional two-bit (Dual I/O or DIO), and four-bit (Quad I/O or QIO) serial commands.

S25FL MIRRORBIT™ Flash Non-Volatile Memory

Infineon Technologies S25FL128S/S25FL256S MIRRORBIT™ Flash Non-Volatile Memory devices employ MIRRORBIT technology that stores two data bits in each memory array transistor. These Infineon devices feature 65nm process lithography as well as Eclipse architecture that dramatically improves program and erase performance. Infineon S25FL128S and S25FL256S Flash Non-Volatile Memory devices offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.

S25 MIRRORBIT™ Flash Non-Volatile Memory

Infineon Technologies S25 MIRRORBIT™ Flash Non-Volatile Memory uses MIRRORBIT technology, which stores two data bits in each memory array transistor; Eclipse architecture dramatically improves program and erase performance; and 65nm process lithography. This family of devices connect to a host system via a Serial Peripheral Interface (SPI). Traditional SPI single bit serial input and output (Single I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit (Quad I/O or QIO) serial commands. In addition, the FL-S family adds support for Double Data Rate (DDR) read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. The Eclipse architecture features a Page Programming Buffer that allows up to 128 words (256 bytes) or 256 words (512 bytes) to be programmed in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. Infineon S25 MIRRORBIT Flash Non-Volatile Memory is ideal for code shadowing, XIP, and data storage.

S25FLxS FL-S NOR Flash Memory Devices

Infineon Technologies S25FLxS FL-S NOR Flash Memory Devices are 2.7V to 3.6V or 1.65V to 3.6V V_IO Volt Non-volatile Memory. The S25FLxS FL-S NOR Flash Memory Devices use 65nm MIRRORBIT™ technology. Featuring the Eclipse™ architecture with a Page Programming Buffer, 256Mb S25FLxS FL-S NOR allows users to program up to 256-words. This results in more effective programming and erasing than prior generation SPI programs or erased algorithms. The devices connect to a host system via an SPI and support traditional SPI single bit serial input and output.

FL Serial NOR Flash Memory

Infineon Technologies FL Serial NOR Flash Memory offers a reduced pin count while providing optimal read/write performance. This feature makes the FL Serial NOR Flash Memory optimal for automotive, networking, consumer electronics, and industrial applications. An AEC-Q100 qualification and PPAP support are available for automotive customers. The Infineon FL family has four product groups: FL-S, FL-L, FL1-K, and FL-P.