Name: Microchip MSC050SDA120B
Brand: Microchip Technology
SKU: 494-MSC050SDA120B
Price: 609.12 TWD
Availability: InStock

說明：

碳化矽肖特基二極管 SIC SBD 1200 V 50 A TO-247

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Pricing (TWD)

數量	單價	總價
	NT$609.12	NT$609.12
	NT$561.60	NT$16,848.00
	NT$488.88	NT$58,665.60

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商品屬性	屬性值	選擇屬性
製造商:	Microchip
產品類型:	碳化矽肖特基二極管
RoHS:
安裝風格:	Through Hole
封裝/外殼:	TO-247-2
配置:	Single
If - 順向電流:	50 A
Vrrm - 重複反向電壓:	1.2 kV
Vf - 順向電壓:	1.5 V
Ifsm - 順向浪湧電流:	290 A
Ir - 反向電流:	200 uA
最低工作溫度:	- 55 C
最高工作溫度:	+ 175 C
系列:	MSC0
封裝:	Tube
品牌:	Microchip Technology
組裝國家:	Not Available
擴散國:	Not Available
原產國:	PH
Pd - 功率消耗 :	429 W
產品類型:	SiC Schottky Diodes
原廠包裝數量:	30
子類別:	Diodes & Rectifiers
Vr - 反向電壓:	1.2 kV
每件重量:	12 g

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CNHTS:: 8541100000
USHTS:: 8541100080
ECCN:: EAR99

碳化矽(SiC)肖特基能障二極體

Microsemi / Microchip碳化矽肖特基能障二極體具有出色的動態性能及熱性能，優於傳統的矽功率二極體。與純矽裝置相比，碳化矽裝置具有更高的介電擊穿場強、更高的帶隙及更高的熱導率。碳化矽肖特基二極體具有零正向及反向恢復電荷，可減少二極體的開關損耗。這些裝置還設有溫度獨立開關，可確保穩定的高溫性能。

Silicon Carbide (SiC) Semiconductors

Microchip Technology Silicon Carbide (SiC) Semiconductors are an innovative option for power electronic designers looking to improve system efficiency, smaller form factor, and higher operating temperature in products covering industrial, medical, military/aerospace, aviation, and communication market segments. Microchip's next-generation SiC MOSFETs and SiC Schottky Barrier Diodes (SBDs) are designed with high repetitive Unclamped Inductive Switching (UIS) capability, and its SiC MOSFETs maintain high UIS capability at approximately 10J/cm² to 15J/cm² and robust short-circuit protection at 3ms to 5ms. The Microchip Technology SiC SBDs are designed with balanced surge current, forward voltage, thermal resistance, and thermal capacitance ratings at low reverse currents for lower switching loss. In addition, SiC MOSFET and SiC SBD can be paired together for use in modules.