Name: Microchip MSC080SMA120S
Brand: Microchip Technology
SKU: 494-MSC080SMA120S
Price: 494.28 TWD
Availability: InStock

說明：

碳化矽MOSFET MOSFET SIC 1200 V 80 mOhm TO-268

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Pricing (TWD)

數量	單價	總價
	NT$494.28	NT$494.28
	NT$455.76	NT$13,672.80
	NT$396.36	NT$47,563.20

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商品屬性	屬性值	選擇屬性
製造商:	Microchip
產品類型:	碳化矽MOSFET
RoHS:
安裝風格:	SMD/SMT
封裝/外殼:	D3PAK-3
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	1.2 kV
Id - C連續漏極電流:	35 A
Rds On - 漏-源電阻:	100 mOhms
Vgs - 閘極-源極電壓:	- 10 V, + 23 V
Vgs th - 門源門限電壓 :	1.8 V
Qg - 閘極充電:	64 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 175 C
Pd - 功率消耗 :	182 W
通道模式:	Enhancement
品牌:	Microchip Technology
配置:	Single
組裝國家:	Not Available
擴散國:	Not Available
原產國:	PH
封裝:	Tube
產品類型:	SiC MOSFETS
原廠包裝數量:	30
子類別:	Transistors
技術:	SiC
每件重量:	6.200 g

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篩選文檔:

規格書

MSC080SMA120S 規格書 (PDF)

DTS

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PCN

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CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Silicon Carbide (SiC) Semiconductors

Microchip Technology Silicon Carbide (SiC) Semiconductors are an innovative option for power electronic designers looking to improve system efficiency, smaller form factor, and higher operating temperature in products covering industrial, medical, military/aerospace, aviation, and communication market segments. Microchip's next-generation SiC MOSFETs and SiC Schottky Barrier Diodes (SBDs) are designed with high repetitive Unclamped Inductive Switching (UIS) capability, and its SiC MOSFETs maintain high UIS capability at approximately 10J/cm² to 15J/cm² and robust short-circuit protection at 3ms to 5ms. The Microchip Technology SiC SBDs are designed with balanced surge current, forward voltage, thermal resistance, and thermal capacitance ratings at low reverse currents for lower switching loss. In addition, SiC MOSFET and SiC SBD can be paired together for use in modules.

碳化矽(SiC) MOSFET

與傳統的矽(Si)功率MOSFET相比，Microsemi/Microchip碳化矽(SiC) MOSFET具有良好的動態及熱性能。這些MOSFET具有低電容、低閘極電荷、快速開關速度及良好的高雪崩耐受性。碳化矽MOSFET能夠在175°C的高結溫下穩定工作。這些MOSFET提供高效率及低開關損耗。這些碳化矽MOSFET無需任何續流二極體，可降低系統成本。典型應用包括智能電網輸配電、感應加熱及焊接、供電及配電。