似乎你已停用瀏覽器的JavaScript。除非你登入，否則此頁面上的某些功能將無法使用。

SCT055W65G3-4AG

Name: STMicroelectronics SCT055W65G3-4AG
Brand: STMicroelectronics
SKU: 511-SCT055W65G3-4AG
Price: 533.16 TWD
Availability: InStock

影像僅供參考
請參閱產品規格

Mouser 編號：

511-SCT055W65G3-4AG

製造商編號：

SCT055W65G3-4AG

製造商：

STMicroelectronics

說明：

碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A

完成您的設計

規格書:

SCT055W65G3-4AG 規格書 (PDF)

ECAD模型:

下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

更多資訊

瞭解更多關於STMicroelectronics SCT055W65G3-4AG的資訊

庫存量: 30

庫存：: 30 可立即送貨

發生意外錯誤了。請稍後再試。
工廠前置作業時間：: 22 週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

NT$-.--

總價:

NT$-.--

估計關稅:

Pricing (TWD)

數量	單價	總價
	NT$533.16	NT$533.16
	NT$424.44	NT$4,244.40
	NT$385.20	NT$38,520.00
	NT$254.16	NT$152,496.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

商品屬性	屬性值	選擇屬性
製造商:	STMicroelectronics
產品類型:	碳化矽MOSFET
RoHS:
安裝風格:	Through Hole
封裝/外殼:	HiP-247-4
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	650 V
Id - C連續漏極電流:	30 A
Rds On - 漏-源電阻:	72 mOhms
Vgs - 閘極-源極電壓:	- 18 V, + 18 V
Vgs th - 門源門限電壓 :	4.2 V
Qg - 閘極充電:	32 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 200 C
Pd - 功率消耗 :	210 W
通道模式:	Enhancement
資格:	AEC-Q100
品牌:	STMicroelectronics
配置:	Single
組裝國家:	Not Available
擴散國:	Not Available
原產國:	CN
下降時間:	10 ns
封裝:	Tube
產品類型:	SiC MOSFETS
上升時間:	3.6 ns
原廠包裝數量:	600
子類別:	Transistors
技術:	SiC
標準斷開延遲時間:	21 ns
標準開啟延遲時間:	12 ns

找到產品:

若要顯示類似商品，請選取至少一個核選方塊

至少選中以上一個核取方塊以顯示在此類別中類似的產品。

所選屬性: 0

篩選文檔:

規格書

SCT055W65G3-4AG 規格書 (PDF)

PCN

Product Change Notification 2025-5-3 (PDF)

此功能需要啟用JavaScript。

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

650V 3rd Gen SiC MOSFETs

STMicroelectronics 650V 3rd Generation Silicon Carbide (SiC) MOSFETs feature low on-state resistance (R_DS(on)) per area, even at high temperatures, and excellent switching performance. This translates into more efficient and compact systems. The SiC MOSFETs feature excellent switching performance over IGBTs, simplifying the thermal design of power electronic systems. These 650V SiC MOSFETs have been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The low RDS(on), low capacitances, and high switching operations improve application performance in frequency, energy efficiency, system size, and weight reduction.

Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance R_DS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.