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STF10N80K5

Name: STMicroelectronics STF10N80K5
Brand: STMicroelectronics
SKU: 511-STF10N80K5
Price: 139.68 TWD
Availability: InStock

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Mouser 編號：

511-STF10N80K5

製造商編號：

STF10N80K5

製造商：

STMicroelectronics

說明：

MOSFET N-channel 800 V, 0.470 Ohm typ., 9 A MDmesh K5 Power MOSFET in a TO-220FP packag

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規格書:

STF10N80K5 規格書 (PDF)

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庫存量: 559

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工廠前置作業時間：: 16 週工廠預計生產時間數量大於所顯示的數量。

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單價:

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總價:

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估計關稅:

Pricing (TWD)

數量	單價	總價
	NT$139.68	NT$139.68
	NT$72.36	NT$723.60
	NT$65.88	NT$6,588.00
	NT$53.64	NT$26,820.00
	NT$50.04	NT$50,040.00

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商品屬性	屬性值	選擇屬性
製造商:	STMicroelectronics
產品類型:	MOSFET
RoHS:
REACH - SVHC:
技術:	Si
安裝風格:	Through Hole
封裝/外殼:	TO-220-3
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	800 V
Id - C連續漏極電流:	9 A
Rds On - 漏-源電阻:	470 mOhms
Vgs - 閘極-源極電壓:	- 30 V, 30 V
Vgs th - 門源門限電壓 :	3 V
Qg - 閘極充電:	22 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 150 C
Pd - 功率消耗 :	30 W
通道模式:	Enhancement
公司名稱:	MDmesh
封裝:	Tube
品牌:	STMicroelectronics
配置:	Single
組裝國家:	Not Available
擴散國:	Not Available
原產國:	CN
下降時間:	14 ns
產品類型:	MOSFETs
上升時間:	11 ns
系列:	STF10N80K5
原廠包裝數量:	1000
子類別:	Transistors
晶體管類型:	1 N-Channel
標準斷開延遲時間:	35 ns
標準開啟延遲時間:	14.5 ns
每件重量:	2 g

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所選屬性: 0

篩選文檔:

規格書

STF10N80K5 規格書 (PDF)

PCN

Product Change Notification 2024-04-02 (PDF)

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

MDmesh K5 Power MOSFETs

STMicroelectronics MDmesh K5 series are very-high voltage MOSFETs with super-junction, industry's best R_DS(on), and figure of merit for increased power density and efficiency. Typical applications include LED lighting, metering, solar inverters, 3-phase auxiliary power supplies, welding, and automotive battery management.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.