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STGWA20H65DFB2

Name: STMicroelectronics STGWA20H65DFB2
Brand: STMicroelectronics
SKU: 511-STGWA20H65DFB2
Price: 117.36 TWD
Availability: InStock

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Mouser 編號：

511-STGWA20H65DFB2

製造商編號：

STGWA20H65DFB2

製造商：

STMicroelectronics

說明：

IGBT Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-247 long l

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規格書:

STGWA20H65DFB2 規格書 (PDF)

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庫存量: 915

庫存：: 915 可立即送貨

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工廠前置作業時間：: 14 週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

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總價:

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估計關稅:

Pricing (TWD)

數量	單價	總價
	NT$117.36	NT$117.36
	NT$72.36	NT$723.60
	NT$48.60	NT$4,860.00
	NT$44.64	NT$26,784.00
	NT$39.24	NT$47,088.00

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商品屬性	屬性值	選擇屬性
製造商:	STMicroelectronics
產品類型:	IGBT
RoHS:
技術:	Si
封裝/外殼:	TO-247-3
安裝風格:	Through Hole
配置:	Single
集電極-發射極最大電壓VCEO:	650 V
集電極-發射極飽和電壓:	1.65 V
柵極發射機最大電壓:	- 20 V, 20 V
連續集電極電流在25 C:	40 A
Pd - 功率消耗 :	147 W
最低工作溫度:	- 55 C
最高工作溫度:	+ 175 C
封裝:	Tube
品牌:	STMicroelectronics
組裝國家:	Not Available
擴散國:	Not Available
原產國:	CN
柵射極漏電電流:	250 nA
產品類型:	IGBT Transistors
原廠包裝數量:	600
子類別:	IGBTs
每件重量:	6.100 g

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篩選文檔:

規格書

STGWA20H65DFB2 規格書 (PDF)

PCN

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

IGBT V Series

STMicroelectronics 600V trench-gate field-stop very high-speed IGBT V series features the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz), and simplified thermal and EMI design.

STGWA20H65DFB2 HB2 IGBT

STMicroelectronics STGWA20H65DFB2 HB2 IGBT is an evolution of the advanced proprietary trench gate field-stop structure. The HB2 series optimizes conduction with premium V_CE(sat) at low current values and reduced switching energy. The STGWA20H65DFB2 HB2 IGBT features a low V_CE(sat) of 1.65V (typical) at an I_C of 20A.

1200V H Series Trench Gate Field-Stop IGBTs

STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at T_J=150°C, minimal collector current turn off tail, and very low saturation voltage (V_CE(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive V_CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.