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STP13N80K5

Name: STMicroelectronics STP13N80K5
Brand: STMicroelectronics
SKU: 511-STP13N80K5
Price: 145.8 TWD
Availability: InStock

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Mouser 編號：

511-STP13N80K5

製造商編號：

STP13N80K5

製造商：

STMicroelectronics

說明：

MOSFET N-Ch 800 V 0.37 Ohm 12 A Zener-protect

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規格書:

STP13N80K5 規格書 (PDF)

ECAD模型:

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庫存量: 33

庫存：: 33 可立即送貨

發生意外錯誤了。請稍後再試。
工廠前置作業時間：: 16 週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

NT$-.--

總價:

NT$-.--

估計關稅:

Pricing (TWD)

數量	單價	總價
	NT$145.80	NT$145.80
	NT$74.52	NT$745.20
	NT$67.68	NT$6,768.00
	NT$56.88	NT$28,440.00

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商品屬性	屬性值	選擇屬性
製造商:	STMicroelectronics
產品類型:	MOSFET
RoHS:
技術:	Si
安裝風格:	Through Hole
封裝/外殼:	TO-220-3
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	800 V
Id - C連續漏極電流:	12 A
Rds On - 漏-源電阻:	370 mOhms
Vgs - 閘極-源極電壓:	- 30 V, 30 V
Vgs th - 門源門限電壓 :	4 V
Qg - 閘極充電:	29 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 150 C
Pd - 功率消耗 :	190 W
通道模式:	Enhancement
公司名稱:	MDmesh
封裝:	Tube
品牌:	STMicroelectronics
配置:	Single
組裝國家:	Not Available
擴散國:	Not Available
原產國:	CN
下降時間:	16 ns
產品類型:	MOSFETs
上升時間:	16 ns
系列:	STP13N80K5
原廠包裝數量:	1000
子類別:	Transistors
晶體管類型:	1 N-Channel
標準斷開延遲時間:	42 ns
標準開啟延遲時間:	16 ns
每件重量:	2 g

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所選屬性: 0

篩選文檔:

規格書

STP13N80K5 規格書 (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

MDmesh K5 Power MOSFETs

STMicroelectronics MDmesh K5 series are very-high voltage MOSFETs with super-junction, industry's best R_DS(on), and figure of merit for increased power density and efficiency. Typical applications include LED lighting, metering, solar inverters, 3-phase auxiliary power supplies, welding, and automotive battery management.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.