STU7N60M2

STMicroelectronics
511-STU7N60M2
STU7N60M2

製造商：

說明：
MOSFET N-CH 600V 0.86Ohm 5A MDmesh M2
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規格書:
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庫存量: 2,974

庫存：
2,974 可立即送貨
工廠前置作業時間：
16 週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:

Pricing (TWD)

數量 單價
總價
NT$69.12 NT$69.12
NT$23.94 NT$239.40
NT$22.10 NT$2,210.00
NT$19.76 NT$9,880.00
NT$18.22 NT$18,220.00
NT$18.18 NT$54,540.00
NT$18.14 NT$163,260.00
24,000 報價

商品屬性 屬性值 選擇屬性
STMicroelectronics
產品類型: MOSFET
RoHS:  
Si
Through Hole
TO-251-3
N-Channel
1 Channel
600 V
5 A
860 mOhms
- 25 V, 25 V
3 V
8.8 nC
- 55 C
+ 150 C
60 W
Enhancement
MDmesh
Tube
品牌: STMicroelectronics
配置: Single
組裝國家: Not Available
擴散國: Not Available
原產國: CN
下降時間: 15.9 ns
產品類型: MOSFETs
上升時間: 7.2 ns
系列: STU7N60M2
原廠包裝數量: 3000
子類別: Transistors
晶體管類型: 1 N-Channel
標準斷開延遲時間: 19.3 ns
標準開啟延遲時間: 7.6 ns
每件重量: 340 mg
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所選屬性: 0

規格書

PCN

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

MDmesh™ II Power MOSFETs

STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.

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