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STW70N60M2

Name: STMicroelectronics STW70N60M2
Brand: STMicroelectronics
SKU: 511-STW70N60M2
Price: 349.92 TWD
Availability: InStock

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Mouser 編號：

511-STW70N60M2

製造商編號：

STW70N60M2

製造商：

STMicroelectronics

說明：

MOSFET N-CH 600V 0.031Ohm typ. 68A MDmesh M2

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規格書:

STW70N60M2 規格書 (PDF)

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庫存量: 577

庫存：: 577 可立即送貨

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工廠前置作業時間：: 20 週工廠預計生產時間數量大於所顯示的數量。

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單價:

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總價:

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估計關稅:

Pricing (TWD)

數量	單價	總價
	NT$349.92	NT$349.92
	NT$206.64	NT$2,066.40
	NT$175.32	NT$17,532.00
	NT$159.48	NT$191,376.00

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商品屬性	屬性值	選擇屬性
製造商:	STMicroelectronics
產品類型:	MOSFET
RoHS:
技術:	Si
安裝風格:	Through Hole
封裝/外殼:	TO-247-3
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	600 V
Id - C連續漏極電流:	68 A
Rds On - 漏-源電阻:	30 mOhms
Vgs - 閘極-源極電壓:	- 25 V, 25 V
Vgs th - 門源門限電壓 :	3 V
Qg - 閘極充電:	118 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 150 C
Pd - 功率消耗 :	450 W
通道模式:	Enhancement
公司名稱:	MDmesh
封裝:	Tube
品牌:	STMicroelectronics
配置:	Single
組裝國家:	Not Available
擴散國:	Not Available
原產國:	CN
下降時間:	9 ns
產品類型:	MOSFETs
上升時間:	17 ns
系列:	STW70N60M2
原廠包裝數量:	600
子類別:	Transistors
晶體管類型:	1 N-Channel
標準斷開延遲時間:	155 ns
標準開啟延遲時間:	32 ns
每件重量:	6 g

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所選屬性: 0

篩選文檔:

規格書

STW70N60M2 規格書 (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

MDmesh™ II Power MOSFETs

STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between R_DS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.