FM28V100-TGTR

Infineon Technologies
877-FM28V100-TGTR
FM28V100-TGTR

製造商：

說明：
F-RAM 1M (128Kx8) 2.2-3.6V F-RAM

規格書:
ECAD模型:
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庫存量: 2,739

庫存：
2,739 可立即送貨
工廠前置作業時間：
20 週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:
包裝:
完整捲（訂購多個1500）

Pricing (TWD)

數量 單價
總價
零卷 / MouseReel™ †
NT$930.96 NT$930.96
NT$862.56 NT$8,625.60
NT$834.84 NT$20,871.00
NT$814.68 NT$40,734.00
NT$794.16 NT$79,416.00
NT$767.88 NT$191,970.00
NT$734.40 NT$367,200.00
NT$650.16 NT$650,160.00
完整捲（訂購多個1500）
NT$586.80 NT$880,200.00
† NT$215.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。 ↩

備用包裝

製造商 元件編號:
FM28V100-TG
包裝:
Tray
供貨情況:
庫存量
價格:
NT$912.96
最小值:
1

相似產品

Infineon Technologies FM28V100-TG
Infineon Technologies
F-RAM 1M (128Kx8) 2.2-3.6V F-RAM
與當前零件比較

商品屬性 屬性值 選擇屬性
Infineon
產品類型: F-RAM
RoHS:  
1 Mbit
Parallel
128 k x 8
TSOP-32
60 ns
2 V
3.6 V
- 40 C
+ 85 C
FM28V100-TG
Reel
Cut Tape
MouseReel
品牌: Infineon Technologies
組裝國家: Not Available
擴散國: Not Available
原產國: TW, CN
濕度敏感: Yes
安裝風格: SMD/SMT
工作電源電壓: 3.3 V
產品類型: FRAM
原廠包裝數量: 1500
子類別: Memory & Data Storage
找到產品:
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所選屬性: 0

規格書

CNHTS:
8542329090
CAHTS:
8542320090
USHTS:
8542320071
JPHTS:
8542320905
KRHTS:
8542321040
TARIC:
8542329000
MXHTS:
8471600499
ECCN:
EAR99

Parallel F-RAM Non-Volatile Memory

Infineon Technologies Parallel F-RAM Non-Volatile Memory operates similarly to other RAM devices and can be used as a drop-in replacement for a standard SRAM in a system. These F-RAMs read and write similar to a standard SRAM. A ferroelectric random access memory or F-RAM is non-volatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of memory. These features make these devices ideal for non-volatile memory applications requiring frequent or rapid writes.

V-Family Low-Power F-RAM

Infineon Technologies V-Family low-power F-RAM devices feature high-performance nonvolatile memory employing an advanced ferroelectric process. Infineon serial F-RAM performs write operations at bus speed, incurs no write delays, and is ideal for nonvolatile memory applications requiring frequent or rapid writes or low power operation. The V-Family parallel F-RAM provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM.

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