IKW30N65ET7XKSA1

Infineon Technologies
726-IKW30N65ET7XKSA1
IKW30N65ET7XKSA1

製造商:

說明:
IGBT 650 V, 30 A IGBT with anti-parallel diode in TO-247 package

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庫存:
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工廠前置作業時間:
26 週 工廠預計生產時間。
此產品已報告長備貨期。
最少: 1   多個: 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:

Pricing (TWD)

數量 單價
總價
NT$177.84 NT$177.84
NT$116.28 NT$1,162.80
NT$91.08 NT$9,108.00
NT$75.96 NT$36,460.80
NT$70.56 NT$84,672.00
NT$65.88 NT$173,923.20

商品屬性 屬性值 選擇屬性
Infineon
產品類型: IGBT
RoHS:  
Si
TO-247-3
Through Hole
Single
650 V
1.35 V
- 20 V, 20 V
60 A
188 W
- 40 C
+ 175 C
IGBT7 T7
Tube
品牌: Infineon Technologies
組裝國家: Not Available
擴散國: Not Available
原產國: DE
柵射極漏電電流: 100 nA
產品類型: IGBT Transistors
原廠包裝數量: 240
子類別: IGBTs
公司名稱: TRENCHSTOP
零件號別名: IKW30N65ET7 SP005348289
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所選屬性: 0

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CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

Low Loss Duopack IGBTs

Infineon Technologies Low Loss Duopack IGBTs offer a robust humidity design with Trenchstop™ and Fieldstop™ technology. They feature a very soft, fast-recovery anti-parallel diode, short tail current, and very low VCEsat.

IGBT7 Discretes

Infineon Technologies IGBT7 Discretes are the 7th generation of TRENCHSTOP™ IGBTs, created with micro-pattern trench technology. The advanced technology delivers unparalleled control and performance, resulting in significant loss reduction, improved efficiency, and increased power density in applications.