MR2A08ACMA35

Name: Everspin Technologies MR2A08ACMA35
Brand: Everspin Technologies
SKU: 936-MR2A08ACMA35
Price: 1379.88 TWD
Availability: InStock

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Mouser 編號：

936-MR2A08ACMA35

製造商編號：

MR2A08ACMA35

製造商：

Everspin Technologies

說明：

MRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM

規格書:

MR2A08ACMA35 規格書 (PDF)

ECAD模型:

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庫存量: 597

庫存：: 597 可立即送貨

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工廠前置作業時間：: 27 週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

NT$-.--

總價:

NT$-.--

估計關稅:

Pricing (TWD)

數量	單價	總價
	NT$1,379.88	NT$1,379.88
	NT$1,276.56	NT$12,765.60
	NT$1,234.80	NT$30,870.00
	NT$1,204.20	NT$60,210.00
	NT$1,173.96	NT$117,396.00
	NT$1,083.60	NT$270,900.00
	NT$1,049.40	NT$365,191.20
2,784	報價

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商品屬性	屬性值	選擇屬性
製造商:	Everspin Technologies
產品類型:	MRAM
RoHS:
REACH - SVHC:
Package / Case:	BGA-48
Interface Type:	Parallel
Memory Size:	4 Mbit
Organization:	512 k x 8
Data Bus Width:	8 bit
Access Time:	35 ns
Supply Voltage - Min:	3 V
Supply Voltage - Max:	3.6 V
Operating Supply Current:	30 mA, 90 mA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Series:	MR2A08A
Packaging:	Tray
Brand:	Everspin Technologies
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TW
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Pd - Power Dissipation:	600 mW
Product Type:	MRAM
原廠包裝數量:	348
Subcategory:	Memory & Data Storage
Tradename:	Parallel I/O (x8)
每件重量:	3 g

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篩選文檔:

規格書

MR2A08ACMA35 規格書 (PDF)

PCN

Alternative Format for Trace Codes (PDF)

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CNHTS:: 8542329010
CAHTS:: 8542320090
USHTS:: 8542320071
JPHTS:: 8542320312
KRHTS:: 8542321040
MXHTS:: 8542320299
ECCN:: EAR99

MR2A08A & MR2A16A 4Mb Parallel MRAM

Everspin Technologies MR2A08A and MR2A16A 4Mb Parallel MRAM devices offer SRAM compatible 35ns read/write timing with unlimited endurance. The MR2A08A series products are 4,194,304-bit Magnetoresistive Random Access Memory (MRAM) devices organized as 524,288 words of 8 bits.

Magnetoresistive Random Access Memory (MRAM)

Everspin Technologies Magnetoresistive Random Access Memory (MRAM) delivers significantly long data retention of >20 years and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. These MRAM devices feature a 1 transistor – 1 magnetic tunnel junction (1T-1MTJ) architecture. Everspin MRAM products consist of serial SPI MRAMs and parallel interface MRAMs. The serial SPI MRAMs offer ideal memory for applications that must store and retrieve data and programs quickly using a minimum number of pins. The parallel interface MRAMs are SRAM compatible with 35ns/45ns access timing and unlimited endurance.