Name: ROHM Semiconductor SCS210KE2HRC11
Brand: ROHM Semiconductor
SKU: 755-SCS210KE2HRC11
Price: 398.52 TWD
Availability: InStock

說明：

碳化矽肖特基二極管 AECQ

Pricing (TWD)

數量	單價	總價
	NT$398.52	NT$398.52
	NT$227.16	NT$2,271.60
	NT$216.36	NT$21,636.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

商品屬性	屬性值	選擇屬性
製造商:	ROHM Semiconductor
產品類型:	碳化矽肖特基二極管
RoHS:
安裝風格:	Through Hole
封裝/外殼:	TO-247N-3
配置:	Dual
If - 順向電流:	10 A
Vrrm - 重複反向電壓:	1.2 kV
Vf - 順向電壓:	1.6 V
Ifsm - 順向浪湧電流:	45 A
Ir - 反向電流:	100 uA
最高工作溫度:	+ 175 C
資格:	AEC-Q101
封裝:	Tube
品牌:	ROHM Semiconductor
組裝國家:	Not Available
擴散國:	Not Available
原產國:	TH
Pd - 功率消耗 :	160 W
產品類型:	SiC Schottky Diodes
原廠包裝數量:	450
子類別:	Diodes & Rectifiers
Vr - 反向電壓:	1.2 kV
零件號別名:	SCS210KE2HR

找到產品:

若要顯示類似商品，請選取至少一個核選方塊

至少選中以上一個核取方塊以顯示在此類別中類似的產品。

所選屬性: 0

篩選文檔:

規格書

SCS210KE2HRC11 規格書 (PDF)

Specification Sheets

此功能需要啟用JavaScript。

USHTS:: 8541100080
TARIC:: 8541100000
ECCN:: EAR99

Silicon Carbide (SiC) Power Devices

ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. ROHM SiC Power Devices also allow designers to use fewer components, further reducing design complexity.

AEC-Q101 SiC Schottky Barrier Diodes

ROHM Semiconductor AEC-Q101 SiC Schottky Barrier Diodes deliver breakdown voltages from 600V, far exceeding the upper limit for silicon SBDs. The AEC-Q101 Diodes utilize SiC, making them ideal for PFC circuits and inverters. Additionally, high-speed switching is enabled with ultra-small reverse recovery time. This minimizes both reverse recovery charge and switching loss, contributing to end-product miniaturization. ROHM AEC-Q101 SiC Schottky Barrier Diodes offer a reverse voltage range of 650V to 1200V, a continuous forward current range of 1.2µA to 260µA, and a total power dissipation range between 48W to 280W. The devices are available in TO-247 and TO-263 packages, with a max temperature of +175°C.