STP80N600K6

STMicroelectronics
511-STP80N600K6
STP80N600K6

製造商：

說明：
MOSFET N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET
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庫存量: 888

庫存：
888 可立即送貨
工廠前置作業時間：
15 週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:

Pricing (TWD)

數量 單價
總價
NT$114.48 NT$114.48
NT$57.60 NT$576.00
NT$53.28 NT$5,328.00
NT$44.64 NT$22,320.00
NT$38.88 NT$38,880.00

商品屬性 屬性值 選擇屬性
STMicroelectronics
產品類型: MOSFET
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
800 V
7 A
600 mOhms
- 30 V, 30 V
4 V
10.7 nC
- 55 C
+ 150 C
86 W
Enhancement
Tube
品牌: STMicroelectronics
組裝國家: Not Available
擴散國: Not Available
原產國: CN
下降時間: 12.6 ns
產品類型: MOSFETs
上升時間: 4.1 ns
原廠包裝數量: 50
子類別: Transistors
晶體管類型: 1 N-Channel
標準斷開延遲時間: 28.2 ns
標準開啟延遲時間: 9 ns
每件重量: 2 g
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所選屬性: 0

規格書

PCN

SPICE Models

此功能需要啟用JavaScript。

CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

STP80N600K6 MDmesh K6 Power MOSFET

STMicroelectronics STP80N600K6 MDmesh K6 Power MOSFET offers a very high voltage, N-channel power solution utilizing the ultimate MDmesh K6 technology. This K6 technology is based on 20 years of STMicroelectronics experience in super junction technology. The result of this technology allows the STMicro STP80N600K6 to feature best-in-class on-resistance per area and gate charge for applications demanding superior power density and high efficiency.

N-Channel MDmesh K6 Power MOSFETs

STMicroelectronics N-Channel MDmesh K6 Power MOSFETs are Zener-protected and 100% avalanche-tested. These power MOSFETs feature 800V minimum drain-source breakdown voltage, ±30V gate-source voltage, and -55°C to 150°C operating junction temperature range. The MDmesh K6 Power MOSFETs also feature 5V/ns peak diode recovery voltage slope, 100A/µs peak diode recovery current slope, and 120V/ns MOSFET dv/dt ruggedness. Typical applications include notebook and AIO, flyback converters, adapters for tablets, and LED lighting.

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