UF3C065030B3

Name: onsemi UF3C065030B3
Brand: onsemi
SKU: 431-UF3C065030B3
Price: 850.32 TWD
Availability: InStock

影像僅供參考
請參閱產品規格

Mouser 編號：

431-UF3C065030B3

製造商編號：

UF3C065030B3

製造商：

onsemi

說明：

碳化矽MOSFET 650V/30MOSICFETG3TO263

壽命週期:

NRND:

不建議用於新設計。

規格書:

UF3C065030B3 規格書

ECAD模型:

下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

更多資訊

瞭解更多關於onsemi UF3C065030B3的資訊

庫存量: 453

庫存：: 453 可立即送貨

發生意外錯誤了。請稍後再試。
工廠前置作業時間：: 31 週工廠預計生產時間數量大於所顯示的數量。

此產品已報告長備貨期。

輸入數量：

最少： 1 多個： 1

單價:

NT$-.--

總價:

NT$-.--

估計關稅:

Pricing (TWD)

數量	單價	總價
	NT$850.32	NT$850.32
	NT$615.24	NT$6,152.40
	NT$608.76	NT$304,380.00
完整捲（訂購多個800）
	NT$574.56	NT$459,648.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

商品屬性	屬性值	選擇屬性
製造商:	onsemi
產品類型:	碳化矽MOSFET
RoHS:
安裝風格:	SMD/SMT
封裝/外殼:	D2PAK-3 (TO-263-3)
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	650 V
Id - C連續漏極電流:	65 A
Rds On - 漏-源電阻:	27 mOhms
Vgs - 閘極-源極電壓:	- 25 V, + 25 V
Vgs th - 門源門限電壓 :	4 V
Qg - 閘極充電:	51 nC
最低工作溫度:	- 25 C
最高工作溫度:	+ 175 C
Pd - 功率消耗 :	242 W
通道模式:	Enhancement
資格:	AEC-Q101
公司名稱:	SiC FET
品牌:	onsemi
配置:	Single
組裝國家:	Not Available
擴散國:	Not Available
原產國:	CN
下降時間:	15 ns
封裝:	Reel
封裝:	Cut Tape
產品類型:	SiC MOSFETS
上升時間:	16 ns
系列:	UF3C
原廠包裝數量:	800
子類別:	Transistors
技術:	SiC
標準斷開延遲時間:	57 ns
標準開啟延遲時間:	32 ns
每件重量:	3 g

找到產品:

若要顯示類似商品，請選取至少一個核選方塊

至少選中以上一個核取方塊以顯示在此類別中類似的產品。

所選屬性: 0

篩選文檔:

規格書

UF3C065030B3 規格書

Models

SPICE Model/UF3C065030B3 (文字)

PCN

此功能需要啟用JavaScript。

CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

UF3C SiC FETs

onsemi UF3C High-Performance SiC FETs are cascode Silicon Carbide (SiC) products that co-package high-performance G3 SiC JFETs with a cascode-optimized Si MOSFET to produce a standard gate drive SiC device. This series exhibits ultra-low gate charge and is excellent for switching inductive loads and applications requiring a standard gate drive. The onsemi UF3C SiC FETs are available in 650V, 1200V, and 1700V versions and are offered in D²PAK-3, D²PAK-7, D²PAK-7L, TO-247-3L, TO-247-4L, and TO-220-3L packages.

UF3C SiC FETs in D2-PAK Package

onsemi UF3C SiC FETs in D2-PAK-3L and D2-PAK-7L surface-mount packages are based on a unique cascode circuit configuration and feature excellent reverse recovery. In the cascode circuit configuration, a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. These onsemi SiC FETs offer low body diode, low gate charge, and a 4.8V threshold voltage that allows 0V to 15V drive. These D2-PAK SiC FET devices are ESD protected and provide package creepage and clearance distance of >6.1mm. The standard gate-drive characteristics of the FETs are drop-in replacements for Si IGBTs, Si FETs, SiC MOSFETs, or Si superjunction. They are available in 1200V and 650V drain-source breakdown voltage variants and are ideal for use in any controlled environment such as telecom and server power, industrial power supplies, motor drives, and induction heating.

High-Performance SiC FETs

onsemi High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.