VSMY2850RG

Vishay Semiconductors
782-VSMY2850RG
VSMY2850RG

製造商：

說明：
紅外發射器 SurflightVCSEL 850nm 100mW/sr, +/-10deg.

規格書:
ECAD模型:
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庫存量: 8,218

庫存：
8,218 可立即送貨
最少： 1   多個： 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:
包裝:
完整捲（訂購多個6000）

Pricing (TWD)

數量 單價
總價
零卷 / MouseReel™ †
NT$30.96 NT$30.96
NT$21.38 NT$213.80
NT$17.32 NT$1,732.00
NT$14.65 NT$7,325.00
NT$13.00 NT$13,000.00
完整捲（訂購多個6000）
NT$10.04 NT$60,240.00
NT$9.65 NT$231,600.00
† NT$215.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。 ↩

商品屬性 屬性值 選擇屬性
Vishay
產品類型: 紅外發射器
RoHS:  
Reel
Cut Tape
MouseReel
品牌: Vishay Semiconductors
組裝國家: Not Available
擴散國: Not Available
原產國: DE
濕度敏感: Yes
產品類型: IR Emitters (IR LEDs)
系列: VSMY2850xG
原廠包裝數量: 6000
子類別: Infrared Data Communications
公司名稱: SurfLight
每件重量: 244.200 mg
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所選屬性: 0

規格書

Models

Technical Resources

USHTS:
8541410000
TARIC:
8541409090
ECCN:
EAR99

VSMY2850x High-Speed IR Emitting Diodes

Vishay Semiconductors VSMY2850x High-Speed IR Emitting Diodes feature a peak wavelength of 850nm based on GaAlAs surface emitter chip technology. These diodes feature high optical power, high radiant intensities, and high speed. The VSMY2850x diodes are molded in clear and untinted plastic packages (with lens) for surface mounting. Vishay Semiconductors VSMY2850x High-Speed IR Emitting Diodes are ideal for IrDA-compatible data transmission, miniature light barriers, photo interrupters, optical switches, IR touch panels, and more.

SurfLight™ IR Emitters

Vishay Semiconductors SurfLight™ Infrared (IR) Emitters feature 850nm or 940nm peak wavelength, GaAlAs surface emitter chip technology, high radiant power, high optical power, and high speed. SurfLight IR emitters have gullwing or reverse gullwing terminal configurations and are suitable for high pulse current operation. The 940nm IR emitters have a narrower half-degree angle of intensity and better response times for applications. These Vishay compared to the previous generation of IR emitters.

IR Emitters & Silicon PIN Photodiode

Vishay Semiconductors IR Emitters and Silicon PIN Photodiodes feature an 830nm to 950nm wavelength range with high radiant sensitivity from 1mW/sr to 1800mW/sr. These emitters provide double heterojunction infrared emitters with the lowest forward voltages and highly efficient homojunction emitters. The photodiodes offer the broadest selection of high-speed, low-dark current PIN photodiodes that are specifically designed to achieve excellent sensitivity together with high reliability.

VSMY系列高速IR發光二極管

Vishay Semiconductors VSMY系列高速IR發光二極管是基於表面發射器技術的紅外線850 納米-發光二極管，具有高輻射強度、高光電功率和高速度的特性。Vishay Semiconductors VSMY系列高速紅IR發光二極管具有四種封裝形式--PLCC-2、鷗翼型、反向鷗翼型和0805 －除第一種外，其餘均為透明無色塑料封裝。所有這些 二極管 專為表面安裝 ，並適合高脈衝電流 操作而設計。
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High-Power, High-Speed Infrared Emitters

Vishay VSMB294x/VSMY2853 High-Speed, High-Power Infrared Emitters consist of an adapted lens radius to provide wide ±25° and ±28° angles of half intensity. The resulting typical radiant intensity ranges from 20mW/sr to 35mW/sr at a 100mA drive current. Saving space over lensed PLCC2 solutions, the IR emitters are available in compact top-view 2.3mm x 2.3mm x 2.5mm gullwing and reverse gullwing packages, and 2.3mm x 2.55mm x 2.3mm side-view packages. These offer fast switching speeds and low forward voltages, as the Vishay devices feature GaAIAs surface emitter chip (VSMY2853), double hetero (VSMF2893), and multi-quantum well (VSMB2943, VSMB2948) technologies.

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