ISSI 嵌入式解決方案

嵌入式解決方案的類型

變更類別視圖
結果: 3,714
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。 數量 RoHS
ISSI DRAM 64M, 3.3V, 143Mhz 2Mx32 SDR SDRAM
最少: 1
倍數: 1
最大: 200

ISSI IS43LQ32256B-062BLI
ISSI DRAM 8G, 1.06-1.17/1.70-1.95V, LPDDR4, 256Mx32, 1600MHz, 200 ball BGA (10mmx14.5mm) RoHS
最少: 1
倍數: 1
最大: 21

ISSI IS46LQ32256B-062BLA1
ISSI DRAM Automotive (Tc: -40 to +95C), 8G, 1.06-1.17/1.70-1.95V, LPDDR4, 256Mx32, 1600MHz, 200 ball BGA (10mmx14.5mm) RoHS
最少: 1
倍數: 1
最大: 200

ISSI IS43LR16128B-5BLI
ISSI DRAM 2G, 1.8V, Mobile DDR, 128Mx16, 200Mhz, 60 ball BGA (8mmx10mm) RoHS, IT
最少: 1
倍數: 1

ISSI IS46QR16512A-075VBLA2
ISSI DRAM Automotive (Tc: -40 to +105C), 8G, 1.2V, DDR4, 512Mx16, 2666MT/s at 19-19-19, 96 ball BGA (10mm x14mm) RoHS, IT
最少: 1
倍數: 1
最大: 200

ISSI DRAM Automotive (-40 to +85C), 256M, 3.3V, SDRAM, 16Mx16, 143MHz, Cu 54 pin TSOP II RoHS
最少: 1
倍數: 1

ISSI DRAM Automotive (-40 to +85C), 256M, 3.3V, SDRAM, 8Mx32, 143MHz, 90 ball BGA (8mmx13mm) RoHS
最少: 1
倍數: 1

ISSI DRAM Automotive (Tc: -40 to +95C), 2G, 1.5V, DDR3, 128Mx16, 1600MT/s at 11-11-11, 96 ball BGA (9mm x13mm) RoHS
最少: 1
倍數: 1

ISSI SRAM 18Mb, 200Mhz 512K x 36 Sync SRAM
最少: 1
倍數: 1
最大: 13

ISSI NOR快閃 16M QSPI, 8-pin SOP 208mil ET
最少: 1
倍數: 1
最大: 345

ISSI NOR快閃 16Mb 3V 66/133Mhz Serial NOR快閃 前置作業時間 16 週
最少: 1
倍數: 1
最大: 200

ISSI DRAM 256M, 3.3V, SDRAM, 16Mx16, 166MHz, 54 pin TSOP II RoHS
最少: 1
倍數: 1
最大: 6

ISSI DRAM 64M, 3.3V, SDRAM, 4Mx16, 166Mhz, 54 pin TSOP II RoHS
最少: 1
倍數: 1
最大: 32

ISSI DRAM Automotive (-40 to +105C), 128M, 3.3V, SDRAM, 8Mx16, 143Mhz, 54 ball BGA (8mmx8mm) ROHS
最少: 1
倍數: 1
最大: 51

ISSI DRAM Automotive (-40 to +105C), 128M, 3.3V, SDRAM, 8Mx16, 143Mhz, 54 pin TSOP II (400 mil) RoHS
最少: 1
倍數: 1
最大: 200

ISSI IS25WJ064F-JBLE
ISSI NOR快閃 64Mb, QPI/QSPI, 8-pin SOP 208Mil, RoHS, new die rev
最少: 1
倍數: 1

ISSI IS25WP512M-RMLE-TY
ISSI NOR快閃 512Mb QPI/QSPI, 16-pin SOP 300Mil, RoHS. dedicated reset pin, Tray
最少: 1
倍數: 1
最大: 42

ISSI IS66WVQ8M4DALL-200BLI
ISSI SRAM 32Mb, QUADRAM, 1.65V-1.95V, 200MHz, 24-ball TFBGA, RoHS
最少: 1
倍數: 1
最大: 13

ISSI DRAM Automotive (Tc: -40 to +105C) 4G, 1.2/1.8V, LPDDR2, 128Mx32, 533MHz, 134 ball BGA (10mmx11.5mm) RoHS, IT 前置作業時間 12 週
最少: 1
倍數: 1
最大: 84

ISSI DRAM Automotive (Tc: -40 to +115C), 2G, 1.5V, DDR3, 128Mx16, 1600MT/s at 11-11-11, 96 ball BGA (9mm x13mm) RoHS 無庫存前置作業時間 12 週
最少: 190
倍數: 190
ISSI SRAM 4Mb,High-Speed/Low Power,Async with ECC,512K x 8,10ns/2.4V-3.6V,36 Ball mBGA (6x8 mm), RoHS 無庫存前置作業時間 12 週
最少: 2,500
倍數: 2,500
: 2,500

ISSI SRAM 4Mb, Low Power/Power Saver,Async,256K x 16,45ns,2.2v-3.6v, 2 CS 48 Ball mBGA (6x8 mm), RoHS 無庫存前置作業時間 12 週
最少: 2,500
倍數: 2,500
: 2,500

ISSI DRAM Automotive (Tc: -40 to +115C), 2G, 1.5V, DDR3, 128Mx16, 1600MT/s at 11-11-11, 96 ball BGA (9mm x13mm) RoHS, T&R 無庫存前置作業時間 12 週
最少: 1,500
倍數: 1,500
: 1,500
ISSI DRAM 128M, 2.5V, Mobile SDRAM, 8Mx16, 133Mhz, 54 ball BGA (8mmx8mm) RoHS, IT, T&R 無庫存前置作業時間 12 週
最少: 2,500
倍數: 2,500
: 2,500

ISSI DRAM 128M, 2.5V, Mobile SDRAM, 4Mx32, 133Mhz, 90 ball BGA (8mmx13mm) RoHS, IT, T&R 無庫存前置作業時間 12 週
最少: 2,500
倍數: 2,500
: 2,500