ISSI 嵌入式解決方案

嵌入式解決方案的類型

變更類別視圖
結果: 3,714
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。 數量 RoHS
ISSI SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16, 20ns,1.65V-2.2V, 44 Pin TSOP II, RoHS 無庫存前置作業時間 12 週
最少: 135
倍數: 135

ISSI SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Ball mBGA (6x8 mm), ERR1/2 pins, RoHS 無庫存前置作業時間 12 週
最少: 480
倍數: 480

ISSI SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Ball mBGA (6x8 mm), RoHS 無庫存前置作業時間 12 週
最少: 2,500
倍數: 2,500
: 2,500

ISSI SRAM 4Mb,High-Speed/Low Power,Async,512K x 8,10ns, 2.4v-3.6v, 36 Ball mBGA (6x8 mm), RoHS 無庫存前置作業時間 12 週
最少: 2,500
倍數: 2,500
: 2,500


ISSI SRAM 4Mb,High-Speed/Low Power,Async,512K x 8,10ns, 2.4v-3.6v, 44 Pin TSOP II, RoHS 無庫存前置作業時間 12 週
最少: 1,000
倍數: 1,000
: 1,000

ISSI SRAM 16Mb,High-Speed,Async,1Mbx16,20ns/1.65v-2.2v, 48 Pin TSOP I, RoHS 無庫存前置作業時間 12 週
最少: 1,500
倍數: 1,500
: 1,500

ISSI SRAM 8Mb,High-Speed/Low Power,Async with ECC,1Mb x 8,10ns,2.4V-3.6V,48 Ball mBGA (6x8 mm), ERR1/2 pins, RoHS 無庫存前置作業時間 12 週
最少: 480
倍數: 480

ISSI SRAM 8Mb,High-Speed/Low Power,Async with ECC,1Mb x 8,10ns,2.4V-3.6V,48 Ball mBGA (6x8 mm), ERR1/2 pins, RoHS 無庫存前置作業時間 12 週
最少: 2,500
倍數: 2,500
: 2,500

ISSI SRAM 8Mb,High-Speed/Low Power,Async with ECC,1Mb x 8,10ns,2.4V-3.6V,48 Ball mBGA (6x8 mm), RoHS 無庫存前置作業時間 12 週
最少: 2,500
倍數: 2,500
: 2,500


ISSI SRAM 2Mb,High-Speed,Async with ECC,128K x 16,10ns,2.4V-3.6V, 44 Pin TSOP II, RoHS 無庫存前置作業時間 12 週
最少: 1
倍數: 1

ISSI SRAM 16Mb,High-Speed,Async,1Mbx16, 10ns, 2.4v-3.6v, 48 Ball mBGA (6x8 mm), RoHS 無庫存前置作業時間 12 週
最少: 2,500
倍數: 2,500
: 2,500


ISSI SRAM 8Mb,High-Speed/Low Power,Async with ECC,1Mb x 8,10ns,2.4V-3.6V,44 Pin TSOP II, RoHS 無庫存前置作業時間 12 週
最少: 135
倍數: 135


ISSI SRAM 2Mb (128K x 16) 10ns 2.4V-3.6V Async SRA 前置作業時間 12 週
最少: 1
倍數: 1

ISSI SRAM 1Mb,High-Speed/Low Power,Async with ECC,128K x 8,10ns/2.4v-3.6v, 48 Ball mBGA (6x8 mm), RoHS
無庫存前置作業時間 12 週
最少: 480
倍數: 480

ISSI SRAM 1Mb,High-Speed/Low Power,Async with ECC,128K x 8,10ns/2.4v-3.6v, 48 Ball mBGA (6x8 mm), RoHS
無庫存前置作業時間 12 週
最少: 2,500
倍數: 2,500
: 2,500


ISSI SRAM 1Mb,High-Speed/Low Power,Async with ECC,128K x 8,10ns/2.4v-3.6v, 32 Pin TSOP II, RoHS
無庫存前置作業時間 12 週
最少: 1,000
倍數: 1,000
: 1,000


ISSI SRAM 8Mb,High-Speed/Low Power,Async with ECC,1Mb x 8,10ns,2.4V-3.6V,44 Pin TSOP II, RoHS 無庫存前置作業時間 12 週
最少: 1,000
倍數: 1,000
: 1,000

ISSI SRAM 1Mb,High-Speed/Low Power,Async with ECC,128K x 8,10ns/2.4v-3.6v, 32 Pin sTSOP I (8x13.4mm), RoHS
無庫存前置作業時間 12 週
最少: 2,000
倍數: 2,000
: 2,000

ISSI SRAM 16Mb,High-Speed,Async,2Mbx8,8ns/3.3v,or 10ns/2.4v-3.6v, 48 Ball mBGA (9x11 mm), RoHS 無庫存前置作業時間 12 週
最少: 2,000
倍數: 2,000
: 2,000

ISSI SRAM 16Mb,High-Speed,Async,2Mbx8,8ns, 2.4v-3.6v, 48 Ball mBGA (6x8 mm), RoHS 無庫存前置作業時間 12 週
最少: 480
倍數: 480


ISSI SRAM 4Mb,High-Speed/Low Power,Async with ECC,256K x 16,8ns/3.3v +/-10%,or 10ns/2.4v-3.6v,44 Pin TSOP II, RoHS 無庫存前置作業時間 12 週
最少: 1
倍數: 1

ISSI SRAM 4Mb,High-Speed/Low Power,Async with ECC, 256K x 16, 20ns, 1.65V-2.2V, 48 Ball mBGA (6x8 mm), RoHS 無庫存前置作業時間 12 週
最少: 2,500
倍數: 2,500
: 2,500

ISSI SRAM 4Mb,High-Speed/Low Power,Async with ECC, 256K x 16, 20ns, 1.65V-2.2V, 48 Ball mBGA (6x8 mm), RoHS 無庫存前置作業時間 12 週
最少: 480
倍數: 480

ISSI SRAM 4Mb,High-Speed/Low Power,Async with ECC,256K x 16,8ns,3.3V,48 Ball mBGA (6x8 mm), RoHS 無庫存前置作業時間 12 週
最少: 2,500
倍數: 2,500
: 2,500

ISSI SRAM 4Mb,High-Speed/Low Power,Async with ECC,256K x 16,10ns,3.3V,48 Ball mBGA (6x8 mm), RoHS 無庫存前置作業時間 12 週
最少: 2,500
倍數: 2,500
: 2,500