|
|
氮化鎵場效應管 700 V, 53 mOhm typ., 26 A, e-mode PowerGaN transistor
- SGT070R70HTO
- STMicroelectronics
-
1:
NT$280.80
-
364庫存量
-
新產品
|
Mouser 元件編號
511-SGT070R70HTO
新產品
|
STMicroelectronics
|
氮化鎵場效應管 700 V, 53 mOhm typ., 26 A, e-mode PowerGaN transistor
|
|
364庫存量
|
|
|
NT$280.80
|
|
|
NT$201.24
|
|
|
NT$175.68
|
|
|
NT$170.64
|
|
|
NT$163.08
|
|
最少： 1
倍數： 1
:
1,800
|
|
|
SMD/SMT
|
TO-LL-11
|
|
|
700 V
|
26 A
|
70 mOhms
|
- 6 V, + 7 V
|
2.5 V
|
8.5 nC
|
- 55 C
|
+ 150 C
|
231 W
|
Enhancement
|
|
|
|
氮化鎵場效應管 700 V, 270 mOhm typ., 6 A, e-mode PowerGaN transistor
- SGT350R70GTK
- STMicroelectronics
-
1:
NT$60.84
-
677庫存量
-
新產品
|
Mouser 元件編號
511-SGT350R70GTK
新產品
|
STMicroelectronics
|
氮化鎵場效應管 700 V, 270 mOhm typ., 6 A, e-mode PowerGaN transistor
|
|
677庫存量
|
|
|
NT$60.84
|
|
|
NT$40.68
|
|
|
NT$33.98
|
|
|
NT$32.69
|
|
|
NT$30.49
|
|
|
檢視
|
|
|
NT$31.64
|
|
|
NT$29.48
|
|
最少： 1
倍數： 1
:
2,500
|
|
|
SMD/SMT
|
DPAK-3
|
|
|
700 V
|
6 A
|
350 mOhms
|
- 1.4 V, + 7 V
|
2.5 V
|
1.5 nC
|
- 55 C
|
+ 150 C
|
47 W
|
Enhancement
|
|
|
|
氮化鎵場效應管 700 V, 60 mOhm typ., 29 A, e-mode PowerGaN transistor
- SGT080R70ILB
- STMicroelectronics
-
1:
NT$216.72
-
-
新產品
|
Mouser 元件編號
511-SGT080R70ILB
新產品
|
STMicroelectronics
|
氮化鎵場效應管 700 V, 60 mOhm typ., 29 A, e-mode PowerGaN transistor
|
|
|
|
|
NT$216.72
|
|
|
NT$159.84
|
|
|
NT$129.60
|
|
|
NT$125.28
|
|
|
NT$120.96
|
|
|
NT$115.20
|
|
最少： 1
倍數： 1
:
3,000
|
|
|
SMD/SMT
|
PowerFLAT-8
|
|
|
700 V
|
29 A
|
80 mOhms
|
- 6 V, + 7 V
|
2.5 V
|
6.2 nC
|
- 55 C
|
+ 150 C
|
188 W
|
Enhancement
|
|
|
|
氮化鎵場效應管 700 V, 80 mOhm typ., 21.7 A, e-mode PowerGaN transistor
- SGT105R70ILB
- STMicroelectronics
-
1:
NT$231.48
-
-
新產品
|
Mouser 元件編號
511-SGT105R70ILB
新產品
|
STMicroelectronics
|
氮化鎵場效應管 700 V, 80 mOhm typ., 21.7 A, e-mode PowerGaN transistor
|
|
|
|
|
NT$231.48
|
|
|
NT$162.36
|
|
|
NT$120.96
|
|
|
NT$111.60
|
|
|
NT$102.24
|
|
|
NT$98.28
|
|
最少： 1
倍數： 1
:
3,000
|
|
|
SMD/SMT
|
PowerFLAT-8
|
|
|
700 V
|
21.7 A
|
105 mOhms
|
- 6 V, + 7 V
|
2.5 V
|
4.8 nC
|
- 55 C
|
+ 150 C
|
158 W
|
Enhancement
|
|
|
|
氮化鎵場效應管 700 V, 106 mOhm typ., 17 A, e-mode PowerGaN transistor
- SGT140R70ILB
- STMicroelectronics
-
1:
NT$174.60
-
-
新產品
|
Mouser 元件編號
511-SGT140R70ILB
新產品
|
STMicroelectronics
|
氮化鎵場效應管 700 V, 106 mOhm typ., 17 A, e-mode PowerGaN transistor
|
|
|
|
|
NT$174.60
|
|
|
NT$122.04
|
|
|
NT$94.32
|
|
|
NT$83.88
|
|
|
NT$78.84
|
|
|
NT$73.08
|
|
最少： 1
倍數： 1
:
3,000
|
|
|
SMD/SMT
|
PowerFLAT-8
|
|
|
700 V
|
17 A
|
140 mOhms
|
- 6 V, + 7 V
|
2.5 V
|
3.5 nC
|
- 55 C
|
+ 150 C
|
113 W
|
Enhancement
|
|
|
|
氮化鎵場效應管 700 V, 138 mOhm typ., 11.5 A, e-mode PowerGaN transistor
- SGT190R70ILB
- STMicroelectronics
-
1:
NT$138.96
-
-
新產品
|
Mouser 元件編號
511-SGT190R70ILB
新產品
|
STMicroelectronics
|
氮化鎵場效應管 700 V, 138 mOhm typ., 11.5 A, e-mode PowerGaN transistor
|
|
|
|
|
NT$138.96
|
|
|
NT$97.20
|
|
|
NT$75.24
|
|
|
NT$66.96
|
|
|
NT$63.00
|
|
|
NT$57.96
|
|
最少： 1
倍數： 1
:
3,000
|
|
|
SMD/SMT
|
PowerFLAT-8
|
|
|
700 V
|
11.5 A
|
190 mOhms
|
- 6 V, + 7 V
|
2.5 V
|
2.8 nC
|
- 55 C
|
+ 150 C
|
83 W
|
Enhancement
|
|
|
|
氮化鎵場效應管 700 V, 165 mOhm typ., 10 A, e-mode PowerGaN transistor
- SGT240R70ILB
- STMicroelectronics
-
1:
NT$136.08
-
-
新產品
|
Mouser 元件編號
511-SGT240R70ILB
新產品
|
STMicroelectronics
|
氮化鎵場效應管 700 V, 165 mOhm typ., 10 A, e-mode PowerGaN transistor
|
|
|
|
|
NT$136.08
|
|
|
NT$94.32
|
|
|
NT$73.44
|
|
|
NT$64.80
|
|
|
NT$60.84
|
|
|
NT$56.16
|
|
最少： 1
倍數： 1
:
3,000
|
|
|
SMD/SMT
|
PowerFLAT-8
|
|
|
700 V
|
10 A
|
240 mOhms
|
- 6 V, + 7 V
|
2.5 V
|
2 nC
|
- 55 C
|
+ 150 C
|
76 W
|
Enhancement
|
|
|
|
氮化鎵場效應管 650 V, 49 mOhm typ., 25 A, e-mode PowerGaN transistor
- SGT65R65AL
- STMicroelectronics
-
3,000:
NT$169.92
-
無庫存前置作業時間 52 週
|
Mouser 元件編號
511-SGT65R65AL
|
STMicroelectronics
|
氮化鎵場效應管 650 V, 49 mOhm typ., 25 A, e-mode PowerGaN transistor
|
|
無庫存前置作業時間 52 週
|
|
最少： 3,000
倍數： 3,000
:
3,000
|
|
|
SMD/SMT
|
PowerFLAT-4
|
N-Channel
|
1 Channel
|
650 V
|
25 A
|
65 mOhms
|
+ 6 V
|
1.8 V
|
5.4 nC
|
- 55 C
|
+ 150 C
|
305 W
|
|
|
臺灣