IXYS MOSFET

結果: 1,577
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 資格 公司名稱 封裝

IXYS MOSFET 24 Amps 500V 0.30 Ohms Rds 295庫存量
300在途量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 24 A 300 mOhms - 30 V, 30 V 5 V 160 nC - 55 C + 150 C 400 W Enhancement Tube
IXYS MOSFET 200V, 60A current capacity, Ultra junction X4, TO-247 package, MOSFET 396庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 60 A 21 mOhms - 20 V, 20 V 4.5 V 11 nC - 55 C + 175 C 250 W Enhancement X4-Class Tube

IXYS MOSFET TrenchP Power MOSFET 549庫存量
390在途量
最少: 1
倍數: 1

Si Through Hole TO-247-3 P-Channel 1 Channel 200 V 68 A 55 mOhms - 15 V, 15 V 4 V 380 nC - 55 C + 150 C 568 W Enhancement Tube

IXYS MOSFET High Voltage Power MOSFET 270庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1.5 kV 2.5 A 6 Ohms - 30 V, 30 V 5 V 44.5 nC - 55 C + 150 C 110 W Enhancement Tube
IXYS MOSFET 200V, 120A, Ultra junction X4, TO-220 package, MOSFET 723庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 120 A 9.5 mOhms - 20 V, 20 V 2.5 V 108 nC - 55 C + 175 C 417 W Enhancement Tube
IXYS MOSFET TenchP Power MOSFET 2,772庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 P-Channel 1 Channel 200 V 32 A 130 mOhms - 15 V, 15 V 4 V 185 nC - 55 C + 150 C 300 W Enhancement Tube
IXYS MOSFET TO220 200V 94A N-CH X4CLASS 719庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 94 A 10.6 mOhms - 20 V, 20 V 4.5 V 77 nC - 55 C + 175 C 360 W Enhancement Tube
IXYS MOSFET 170 Amps 100V 0.009 Ohm Rds 1,252庫存量
1,170在途量
最少: 1
倍數: 1

Si Through Hole TO-3P-3 N-Channel 1 Channel 100 V 170 A 9 mOhms - 20 V, 20 V 5 V 198 nC - 55 C + 175 C 714 W Enhancement Tube
IXYS MOSFET 96 Amps 200V 0.024 Rds 316庫存量
最少: 1
倍數: 1

Si Through Hole TO-3P-3 N-Channel 1 Channel 200 V 96 A 24 mOhms - 20 V, 20 V 2.5 V 145 nC - 55 C + 175 C 600 W Enhancement Tube

IXYS MOSFET 850V Ultra Junction X-Class Pwr MOSFET 287庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 850 V 20 A 330 mOhms - 30 V, 30 V 3.5 V 63 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube

IXYS MOSFET 250V/80A Ultra Junct ion X3-Class MOSFET 364庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 250 V 80 A 16 mOhms - 20 V, 20 V 2.5 V 83 nC - 55 C + 150 C 390 W Enhancement HiPerFET Tube
IXYS MOSFET 850V Ultra Junction X-Class Pwr MOSFET 371庫存量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 850 V 50 A 105 mOhms - 30 V, 30 V 3.5 V 152 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFET 500V 64A 389庫存量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 500 V 64 A 85 mOhms - 30 V, 30 V 3 V 150 nC - 55 C + 150 C 830 W Enhancement HiPerFET Tube
IXYS MOSFET 500V 16A 1,726庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 16 A 400 mOhms - 30 V, 30 V 3 V 36 nC - 55 C + 150 C 300 W Enhancement HiPerFET Tube
IXYS MOSFET MOSFET 650V/22A Ultra Junction X2 729庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 22 A 160 mOhms - 30 V, 30 V 2.7 V 38 nC - 55 C + 150 C 390 W Enhancement HiPerFET Tube
IXYS MOSFET 3 Amps 1200V 4.50 Rds 442庫存量
150在途量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 1.2 kV 3 A 4.5 Ohms - 20 V, 20 V 5 V 39 nC - 55 C + 150 C 200 W Enhancement HiPerFET Tube

IXYS MOSFET PLUS247 250V 240A N-CH X3CLASS 232庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-PLUS-3 N-Channel 1 Channel 250 V 240 A 5 mOhms - 20 V, 20 V 2.5 V 345 nC - 55 C + 150 C 1.25 mW Enhancement HiPerFET Tube

IXYS MOSFET N-Ch 200V Enh FET 200Vdgr 300A 4mOhm 250庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-PLUS-3 N-Channel 1 Channel 200 V 300 A 4 mOhms - 20 V, 20 V 2.5 V 375 nC - 55 C + 150 C 1.25 mW Enhancement HiPerFET Tube

IXYS MOSFET 600V 64A 0.095Ohm PolarP3 Power MOSFET 267庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 64 A 95 mOhms - 30 V, 30 V 5 V 145 nC - 55 C + 150 C 1.13 kW Enhancement HiPerFET Tube

IXYS MOSFET 500V 78A 0.068Ohm PolarP3 Power MOSFET 160庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 78 A 68 mOhms - 30 V, 30 V 5 V 147 nC - 55 C + 150 C 1.13 kW Enhancement HiPerFET Tube
IXYS MOSFET N-CH MOSFETS (D2) 1000V 3A 824庫存量
648在途量
最少: 1
倍數: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1 kV 3 A 6 Ohms - 20 V, 20 V 4.5 V 37.5 nC - 55 C + 150 C 125 W Depletion Tube
IXYS MOSFET 4500V 0.9A HV Power MOSFET 162庫存量
最少: 1
倍數: 1

Si Through Hole ISOPLUS-i4-PAK-3 N-Channel 1 Channel 4.5 kV 900 mA 80 Ohms - 20 V, 20 V 3.5 V 46 nC - 55 C + 150 C 160 W Enhancement Tube

IXYS MOSFET -52.0 Amps -100V 0.050 Rds 306庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 P-Channel 1 Channel 100 V 52 A 50 mOhms - 20 V, 20 V 4 V 60 nC - 55 C + 150 C 300 W Enhancement PolarP Tube
IXYS MOSFET 200V, 60A current capacity, Ultra junction X4, TO-220 package, MOSFET 269庫存量
300在途量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 60 A 21 mOhms - 20 V, 20 V 4.5 V 11 nC - 55 C + 175 C 250 W Enhancement X4-Class Tube
IXYS MOSFET D2 Depletion Mode Power MOSFET 901庫存量
300預期2026/7/27
最少: 1
倍數: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 1 kV 10 A 1.5 Ohms - 20 V, 20 V 4.5 V 200 nC - 55 C + 150 C 695 W Depletion Tube