|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
- SCT070H120G3AG
- STMicroelectronics
-
1:
NT$438.12
-
85庫存量
|
Mouser 元件編號
511-SCT070H120G3AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
|
|
85庫存量
|
|
|
NT$438.12
|
|
|
NT$306.72
|
|
|
NT$263.88
|
|
|
NT$246.60
|
|
最少： 1
倍數： 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
37 nC
|
- 55 C
|
+ 175 C
|
223 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
- SCT1000N170
- STMicroelectronics
-
1:
NT$319.68
-
564庫存量
|
Mouser 元件編號
511-SCT1000N170
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
|
|
564庫存量
|
|
|
NT$319.68
|
|
|
NT$218.88
|
|
|
NT$162.00
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.7 kV
|
6 A
|
1 Ohms
|
- 10 V, + 25 V
|
2.1 V
|
14 nC
|
- 55 C
|
+ 200 C
|
120 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
- SCT20N120AG
- STMicroelectronics
-
1:
NT$572.40
-
470庫存量
|
Mouser 元件編號
511-SCT20N120AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
|
|
470庫存量
|
|
|
NT$572.40
|
|
|
NT$422.28
|
|
|
NT$293.04
|
|
|
檢視
|
|
|
報價
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
|
N-Channel
|
1 Channel
|
1.2 kV
|
20 A
|
239 mOhms
|
- 20 V, + 20 V
|
3.5 V
|
45 nC
|
- 55 C
|
+ 200 C
|
175 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
- SCTL35N65G2V
- STMicroelectronics
-
1:
NT$576.72
-
2,319庫存量
|
Mouser 元件編號
511-SCTL35N65G2V
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
|
|
2,319庫存量
|
|
|
NT$576.72
|
|
|
NT$407.52
|
|
|
NT$374.76
|
|
|
NT$374.40
|
|
|
NT$360.36
|
|
|
NT$349.92
|
|
最少： 1
倍數： 1
:
3,000
|
|
|
SMD/SMT
|
PowerFLAT-5
|
N-Channel
|
1 Channel
|
650 V
|
40 A
|
67 mOhms
|
- 10 V, + 22 V
|
5 V
|
73 nC
|
- 55 C
|
+ 175 C
|
417 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
- SCTW70N120G2V
- STMicroelectronics
-
1:
NT$1,171.80
-
714庫存量
|
Mouser 元件編號
511-SCTW70N120G2V
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
|
|
714庫存量
|
|
|
NT$1,171.80
|
|
|
NT$861.12
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
91 A
|
21 mOhms
|
- 10 V, + 22 V
|
4.9 V
|
150 nC
|
- 55 C
|
+ 200 C
|
547 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package
- SCTWA40N12G24AG
- STMicroelectronics
-
1:
NT$632.16
-
90庫存量
|
Mouser 元件編號
511-SCTWA40N12G24AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package
|
|
90庫存量
|
|
|
NT$632.16
|
|
|
NT$449.28
|
|
|
NT$393.48
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
33 A
|
105 mOhms
|
- 18 V, + 18 V
|
5 V
|
63 nC
|
- 55 C
|
+ 200 C
|
290 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package
- SCT011HU75G3AG
- STMicroelectronics
-
1:
NT$900.36
-
7庫存量
-
新產品
|
Mouser 元件編號
511-SCT011HU75G3AG
新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package
|
|
7庫存量
|
|
|
NT$900.36
|
|
|
NT$661.68
|
|
|
NT$661.32
|
|
|
NT$617.76
|
|
最少： 1
倍數： 1
:
600
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
750 V
|
110 A
|
15 mOhms
|
- 10 V, + 22 V
|
3.2 V
|
154 nC
|
- 55 C
|
+ 175 C
|
652 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
- SCT070HU120G3AG
- STMicroelectronics
-
1:
NT$479.88
-
3庫存量
|
Mouser 元件編號
511-SCT070HU120G3AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
|
|
3庫存量
|
|
|
NT$479.88
|
|
|
NT$331.20
|
|
|
NT$297.72
|
|
|
NT$284.40
|
|
最少： 1
倍數： 1
:
600
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
37 nC
|
- 55 C
|
+ 175 C
|
223 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
- SCTWA90N65G2V-4
- STMicroelectronics
-
1:
NT$1,048.32
-
101庫存量
|
Mouser 元件編號
511-SCTWA90N65G2V-4
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
|
|
101庫存量
|
|
|
NT$1,048.32
|
|
|
NT$792.36
|
|
|
NT$758.52
|
|
|
報價
|
|
|
報價
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
650 V
|
119 A
|
24 mOhms
|
- 10 V, + 22 V
|
5 V
|
157 nC
|
- 55 C
|
+ 200 C
|
565 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an H
- SCTW100N65G2AG
- STMicroelectronics
-
1:
NT$1,241.64
-
281庫存量
-
NRND
|
Mouser 元件編號
511-SCTW100N65G2AG
NRND
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an H
|
|
281庫存量
|
|
|
NT$1,241.64
|
|
|
NT$925.92
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
650 V
|
100 A
|
69 mOhms
|
- 10 V, + 22 V
|
5 V
|
162 nC
|
- 55 C
|
+ 200 C
|
420 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP24
- SCTW90N65G2V
- STMicroelectronics
-
1:
NT$907.56
-
45庫存量
|
Mouser 元件編號
511-SCTW90N65G2V
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP24
|
|
45庫存量
|
|
|
NT$907.56
|
|
|
NT$824.76
|
|
|
NT$728.28
|
|
|
報價
|
|
|
報價
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
650 V
|
90 A
|
25 mOhms
|
- 10 V, + 22 V
|
1.9 V
|
157 nC
|
- 55 C
|
+ 200 C
|
390 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247-4 package
- SCTWA70N120G2V-4
- STMicroelectronics
-
1:
NT$1,161.72
-
28庫存量
|
Mouser 元件編號
511-SCTWA70N120G2V-4
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247-4 package
|
|
28庫存量
|
|
|
NT$1,161.72
|
|
|
NT$851.76
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
HIP247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
91 A
|
30 mOhms
|
- 10 V, + 22 V
|
2.45 V
|
150 nC
|
- 55 C
|
+ 200 C
|
547 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
- SCT025H120G3AG
- STMicroelectronics
-
1:
NT$617.76
-
-
新產品
|
Mouser 元件編號
511-SCT025H120G3AG
新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
|
|
|
|
|
NT$617.76
|
|
|
NT$438.48
|
|
|
NT$409.32
|
|
|
NT$381.96
|
|
最少： 1
倍數： 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
- SCT015W120G3-4AG
- STMicroelectronics
-
1:
NT$866.88
-
|
Mouser 元件編號
511-SCT015W120G3-4AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
|
|
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
129 A
|
15 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
167 nC
|
- 55 C
|
+ 200 C
|
673 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
- SCT027HU65G3AG
- STMicroelectronics
-
1:
NT$486.72
-
-
新產品
|
Mouser 元件編號
511-SCT027HU65G3AG
新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
|
|
|
|
|
NT$486.72
|
|
|
NT$363.24
|
|
|
NT$314.28
|
|
|
NT$277.92
|
|
最少： 1
倍數： 1
:
600
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
AEC-Q100
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
- SCT040H120G3AG
- STMicroelectronics
-
1:
NT$456.84
-
|
Mouser 元件編號
511-SCT040H120G3AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
|
|
|
|
|
NT$456.84
|
|
|
NT$320.04
|
|
|
NT$278.28
|
|
|
NT$259.92
|
|
最少： 1
倍數： 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
54 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
- SCT055HU65G3AG
- STMicroelectronics
-
1:
NT$453.96
-
|
Mouser 元件編號
511-SCT055HU65G3AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
|
|
|
|
|
NT$453.96
|
|
|
NT$317.52
|
|
|
NT$275.40
|
|
|
NT$257.04
|
|
最少： 1
倍數： 1
:
600
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
72 mOhms
|
- 10 V, + 22 V
|
4.2 V
|
29 nC
|
- 55 C
|
+ 175 C
|
185 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an
- SCT10N120AG
- STMicroelectronics
-
1:
NT$331.20
-
|
Mouser 元件編號
511-SCT10N120AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an
|
|
|
|
|
NT$331.20
|
|
|
NT$194.76
|
|
|
NT$169.92
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
|
N-Channel
|
1 Channel
|
1.2 kV
|
12 A
|
500 mOhms
|
- 10 V, + 25 V
|
3.5 V
|
22 nC
|
- 55 C
|
+ 200 C
|
150 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
- SCT025H120G3-7
- STMicroelectronics
-
1:
NT$604.44
-
100在途量
-
新產品
|
Mouser 元件編號
511-SCT025H120G3-7
新產品
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
|
|
100在途量
|
|
|
NT$604.44
|
|
|
NT$467.64
|
|
|
NT$404.64
|
|
|
NT$404.28
|
|
|
NT$357.48
|
|
最少： 1
倍數： 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
- SCT040W120G3-4
- STMicroelectronics
-
1:
NT$414.00
-
100在途量
-
新產品
|
Mouser 元件編號
511-SCT040W120G3-4
新產品
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
|
|
100在途量
|
|
|
NT$414.00
|
|
|
NT$251.28
|
|
|
NT$231.48
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 10 V, + 22 V
|
3.1 V
|
56 nC
|
- 55 C
|
+ 200 C
|
312 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A in a STPAK high creepage package
- SCTHC250N120G3AG
- STMicroelectronics
-
1:
NT$2,715.12
-
-
新產品
|
Mouser 元件編號
511-SCTHC250N120G3AG
新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A in a STPAK high creepage package
|
|
|
|
|
NT$2,715.12
|
|
|
NT$2,194.20
|
|
|
NT$2,057.40
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
STPAK-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
239 A
|
10.5 nC
|
- 10 V, + 22 V
|
4.4 V
|
304 nC
|
- 55 C
|
+ 200 C
|
994 W
|
|
AEC-Q100
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A
- SCT011H75G3AG
- STMicroelectronics
-
1:
NT$836.28
-
無庫存前置作業時間 21 週
-
新產品
|
Mouser 元件編號
511-SCT011H75G3AG
新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A
|
|
無庫存前置作業時間 21 週
|
|
|
NT$836.28
|
|
|
NT$723.96
|
|
|
NT$615.24
|
|
最少： 1
倍數： 1
:
1,000
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
AEC-Q100
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A
- SCT014HU65G3AG
- STMicroelectronics
-
600:
NT$514.80
-
無庫存前置作業時間 22 週
-
新產品
|
Mouser 元件編號
511-SCT014HU65G3AG
新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A
|
|
無庫存前置作業時間 22 週
|
|
最少： 600
倍數： 600
:
600
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
AEC-Q100
|
|
|
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A in a TO-LL package
- SCT014TO65G3
- STMicroelectronics
-
1,800:
NT$378.36
-
無庫存前置作業時間 20 週
-
新產品
|
Mouser 元件編號
511-SCT014TO65G3
新產品
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A in a TO-LL package
|
|
無庫存前置作業時間 20 週
|
|
|
NT$378.36
|
|
|
檢視
|
|
|
報價
|
|
最少： 1,800
倍數： 1,800
:
1,800
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT018H65G3-7
- STMicroelectronics
-
1,000:
NT$318.24
-
無庫存前置作業時間 21 週
-
新產品
|
Mouser 元件編號
511-SCT018H65G3-7
新產品
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
|
|
無庫存前置作業時間 21 週
|
|
最少： 1,000
倍數： 1,000
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
55 A
|
27 mOhms
|
-10 V, 22 V
|
4.2 V
|
79.4 nC
|
- 55 C
|
+ 175 C
|
385 W
|
Enhancement
|
|
|
臺灣